An experimental study on the linear differential scattering coefficients of the GaAs, n- and p-type Si

Abstract

The linear differential scattering coefficients at 60 keV have been measured for GaAs, p-Si and n-Si semiconductors at seven angles ranging from 60 degrees to 120 degrees at intervals of 10 degrees. The results have been compared with relativistic and non-relativistic theoretical values. The objective of this work is to seek evidence whether there is a relationship between the LDSC and the scattering angle. The LDSCs have been measured with energy-dispersive X-ray fluorescence spectroscopy (EDXRF) for wafers as GaAs, n- and p-type Si. This is the first time the LDSCs have been measured at < 100 keV energies, so there is no comparable findings reported in the literature. (C) 2009 Elsevier B.V. All rights reserved.