| dc.contributor.author | Telli, MB; Bharadwaja, SSN; Biegalski, MD; Trolier-McKinstry, S | |
| dc.date.accessioned | 2020-07-01T08:50:14Z | |
| dc.date.available | 2020-07-01T08:50:14Z | |
| dc.date.issued | DEC 18 | |
| dc.date.issued | 2006 | |
| dc.identifier.uri | http://hdl.handle.net/20.500.12481/9475 | |
| dc.description.abstract | (00l) epitaxial AgTaO3 and AgNbO3 thin films were prepared on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition. The dielectric constants and loss of similar to 300 nm thick films were 110 +/- 10 and 0.025 +/- 0.005 for AgTaO3 and 550 +/- 55 and 0.020 +/- 0.005 for AgNbO3 at room temperature. In both films, the temperature coefficient of capacitance is smaller than that for bulk ceramics of the same composition. The capacitance changes from -20 to 120 degrees C were <= 1.2% for AgTaO3 and <= 3.6% for AgNbO3. The tunability of the AgTaO3 film was 1.6% at 230 kV/cm field, while 21% tunability was measured for AgNbO3 at 190 kV/cm. (c) 2006 American Institute of Physics. | |
| dc.title | (00l) epitaxial AgTaO3 and AgNbO3 thin films on (001)SrRuO3/(001)LaAlO3 substrates by chemical solution deposition | |
| dc.title.alternative | APPLIED PHYSICS LETTERS | |
| dc.identifier.DOI-ID | 10.1063/1.2403918 | |
| dc.identifier.volume | 89 | |
| dc.identifier.issue | 25 | |
| dc.identifier.issn/e-issn | 0003-6951 | |
| dc.identifier.issn/e-issn | 1077-3118 | |
